fn tunneling
基本解释
- [電子、通信與自動控制技術]fn隧穿
英汉例句
- FN tunneling and hot hole (HH) stress induced leakage current (SILC) transient characteristics in thin gate oxide are investigated.
分別研究了FN隧穿應力和熱空穴(HH)應力導致的薄柵氧化層漏電流瞬態特性。 - With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.
隨著器件尺寸的迅速減小,直接隧穿電流將代替FN電流而成爲影響器件可靠性的主要因素。 - In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.
在中等電場區域,注入電子能通過FN電流和直接隧穿到達能被填充的陷阱,從而使漏電流産生準態飽和。
雙語例句
专业释义
- fn隧穿