PHEMTs

基本解释

PHEMT transistor(ATF-35143) is used in this design.
设计采用了PHEMT晶体管(ATF-35143)。
Subsequently analyzing the principle of broadband matching technology with GaAs PHEMT model and S-paramter .
结合GaAs PHEMT模型和S端口参数分析了宽频带匹配技术的原理;
This article will describe followsings: Analyzed the basic physical model of pHEMT such as carrier mobility, carrier generation and recombination models.
本论文的主要工作是：分析了诸如载流子迁移率模型、产生复合模型等pHEMT的基本物理模型以及基本工作原理；
In this thesis, AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs) grown by metal organic chemical vapor deposition (MOCVD) have been fabricated and investigated.
中文摘要在本论文中，我们以有机金属化学气相沉积法成长及研制砷化铝镓/砷化铟镓/砷化镓拟晶性高电子移动率电晶体。
Commercial GaAs pHEMT transistors, Agilent ATF-35143, were used in this 2-stage amplifier. At a physical temperature 15K the amplifier achieves noise temperature between 3.2K and 3.8K over 1600MHz to 1740MHz band.
该放大器采用了Agilent 公司ATF-35143 假晶高电子迁移率场效应管(pHEMT),为两级级联结构,频率范围1600MHz~1740MHz。